Next-gen Semiconductors
Samsung Electronics unveiled the industry’s first 10 nm semiconductor technologies, following the recent news that it started the mass production of mobile processor chips using 14-nanometer FinFET technology.
On Feb. 23, Kim Ki-nam, president of Samsung’s semiconductor business, delivered a keynote speech titled “Silicon Semiconductor Technology and Solution in the Data-driven Era,” at the 2015 International Solid-State Circuit Conference (ISSCC) in San Francisco.
The ISSCC is one of the world’s top 3 semiconductor societies where leading semiconductor experts around the world gather and publish research papers on circuit design every year.
President Kim, who is a member of the National Academy of Engineering (NAE) and a fellow member of the Institute of Electrical and Electronics Engineers (IEEE), is in charge of the semiconductor business in Samsung Electronics.
He said in his keynote address, “Thanks to the spread of various information technology devices, including the Internet of Things, we will usher in the data-driven era in the future. Through the innovation of silicon semiconductor technology, it is possible to improve the performance of semiconductor chips, which can process such data, and secure low-power solutions.”
Also, Samsung Electronics unveiled its next-generation semiconductor technologies, including 10-nanometer FinFET technologies. In the memory sector, it presented 10 nm DRAM elements and 3D V-NAND technologies. In the system semiconductor sector, it presented 10-nanometer FinFET technology, which is smaller and more advanced than the 14-nanometer FinFET technology.
In order to overcome the limitations of the planar structure in the previous 20 nm process, Samsung Electronics has developed a 3D FinFET structure for transistors when manufacturing mobile application processors.
Samsung Electronics is still the only semiconductor manufacturer that can produce 14-nm-scale products.