12GB DRAM
SK Hynix announced on April 7 that it has developed the world’s first 20-nanometer-class 128GB DDR4 memory chip.
To date, only 64GB modules have been available, but 20nm 8GB chips were utilized to double the capacity on a single chip with Through Silicon Via (TSV) technology. TSV technology is a high-performance technique used to create 3D packages that enable a vertical electrical connection passing through two or more chips. It can improve performance and reduce the size of chips.
The new memory module runs at 2133Mbps, 1,333Mbps faster than DDR3, and can handle 17GB of data per second through a 64-bit Information Outlet (I/O), and only requires 1.2V compared to 1.35V of DDR3.
The world's second-largest memory chip manufacturer is planning to mass-produce the new product starting in the first half of next year. SK Hynix anticipates that it will be able to further strengthen its technological leadership in the DRAM market with the development of industry’s first 64GB and 128GB modules.