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Samsung to Mass-produce 10-nanometer 16 Gb DRAMs for Automobiles
New Chip Endures High Temperature
Samsung to Mass-produce 10-nanometer 16 Gb DRAMs for Automobiles
  • By Cho Jin-young
  • April 26, 2018, 10:12
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Samsung Electronics elevates the 16 gigabit DRAM for automobiles to the industry's best performance and power efficiency by applying a 10-nanometer micro process.
Samsung Electronics elevates the 16 gigabit DRAM for automobiles to the industry's best performance and power efficiency by applying a 10-nanometer micro process.

Samsung Electronics will mass-produce 10-nanometer 16 gigabit DRAM chips for automobiles. The product flaunts the industry's best high-temperature reliability, high speed and ultra-low power consumption.

According to the semiconductor industry on April 25, Samsung Electronics is the only company that offer products that can satisfy Autograde 1 (-40 to 125 degrees) as 10-nanometer DRAMs.


Samsung Electronics elevated the product to the industry's best performance and power efficiency by applying a 10-nanometer micro process. This product can process data at the industry's fastest speed of 4266Mbps even at 125 ℃, 14% faster than current 20-nm 8Gb LPDDR4 DRAMs and realizes up to 30% higher power consumption efficiency.

Industry experts say that Samsung Electronics recently applied 10 nanometer DRAMs to automotive semiconductors despite the shortage of DRAMs in order to show its will to preempt the market of semiconductors for automobiles and its confidence about a 10-namometer process.

According to market researcher IHS Markit, the automotive semiconductor market is expected to grow at a compound annual growth rate (CAGR) of 8.2% by 2021. At the end of last year, Samsung Electronics said that the semiconductor giant was planning to start mass production of 10nm DRAMs for the first time, excluding some application products, in 2018 with an announcement of mass production of second-generation 10nm DRAMs.