Kwon Eon-oh, vice president of High Bandwidth Memory (HBM) Product Innovation (PI) at SK hynix, stated on March 28 that “the next-generation HBM not only has to excel in functionality as a given but also needs to evolve into a form that can play roles beyond memory, offering differentiated specialty capabilities tailored to each customer.”
Vice President Kwon predicted, “Future types of memory for artificial intelligence (AI) will expand beyond the current data center types to include Application-Specific Integrated Circuit forms that are tailored for specific purposes with improved performance and efficiency, as well as on-device forms optimized for customers’ products.”
He continued, “Not just HBM, but various types of DRAM will be used as memory for AI, necessitating the development of devices specialized for various conditions beyond traditional characteristics. In this era of rapid changes, we need to broaden our perspectives to fuse multiple technologies and create synergy.”
Vice President Kwon is an expert in the field of DRAM, having introduced the world’s first next-generation process, High-K Metal Gate (HKMG), to mobile DRAM, Low Power DDR (LPDDR), in 2022, improving speed and reducing power consumption. Last year, he was promoted to an executive position and took on the important task of completing the SK hynix HBM technology road map.