According to foreign media reports, Samsung Electronics is set to adopt High Bandwidth Memory (HBM) process technology from SK hynix to catch up with its competitors in the HBM market.
Reuters reported on March 13, citing multiple sources, that Samsung Electronics has purchased related manufacturing equipment to introduce SK hynix’s “MR-MUF” process. Reuters also mentioned that Samsung is currently negotiating with companies like Japan’s Nagase for the supply of MUF materials.
The MR-MUF manufacturing technology developed by SK hynix is known to be more efficient than the traditional method. It involves inserting a protective material between stacked chips and solidifying it in one go, as opposed to peeling off a film-type material each time a chip is stacked. Samsung Electronics has been adopting this Non-Conductive Film (NCF) process for HBM production.
Citing industry analysts, Reuters reported that the yield (rate of good quality products) of Samsung’s 4th generation HBM3 products is estimated to be about 10-20%, whereas SK hynix’s is between 60-70%. However, Samsung countered by stating that it has secured stable yield.
A source told Reuters, “Samsung Electronics had to do something to improve its HBM yield. Adopting the MUF technology is a blow to Samsung’s pride because it means following a technology first used by SK hynix.”
Samsung Electronics has outright denied the Reuters report stating, “There is no plan to introduce the MUF process.” Samsung has also applied the NCF process to its recently unveiled 5th generation HBM3E 12-layer product.