Samsung Electronics is set to make a groundbreaking reveal at an Nvidia event, showcasing a physical High Bandwidth Memory (HBM) 3E 12-tier (H), which is slated for mass production in the first half of this year.
As Nvidia, a key customer of HBM, prepares to launch its next-generation artificial intelligence (AI) chips, the H200 and B100, in the first half, this presentation is anticipated to pave the way for Samsung to secure a crucial supply deal for HBM3E.
According to industry sources on March 5, Samsung Electronics will participate in the world’s largest AI conference, GTC 2024, hosted by Nvidia at the San Jose Convention Center in the United States from Feb. 18 to 21. The company plans to showcase a range of next-generation memory products, including the Shinebolt HBM3E brand.
Last month, Samsung Electronics announced the successful development of a high-capacity 36GB HBM3E 12-tier product, marking the first time this product has been revealed to the public.
Samsung intends to commence mass production of the HBM3E product within the first half of the year. This product is expected to be featured in Nvidia’s next-generation AI chips, the H200 and B100. Samsung has already sent samples to Nvidia and has begun the verification process.
The HBM market is becoming increasingly competitive. Market research firms report that while SK hynix and Samsung Electronics currently dominate over 90% of the HBM market, American company Micron Technology is quickly catching up.
At the event, SK hynix will also have an exhibition booth showcasing its own HBM3 and HBM3E memory chips. Micron Technology plans to introduce its 24GB HBM3E 8-tier product, which will be used in Nvidia’s H200 chip.