An image of 192-layer 3D NAND flash memory developed in house by Yangtze Memory Technologies last year.
An image of 192-layer 3D NAND flash memory developed in house by Yangtze Memory Technologies last year.

ChangXin Memory Technologies (CXMT), a leading DRAM semiconductor company in China, has independently developed and started mass production of LPDDR5 DRAM memory chips. If true, this development puts them just four years behind industry leader Samsung in technology.

On Nov. 29, ChangXin Memory announced on its website that it has developed the country’s first LPDDR5 DRAM memory chips. The company is set to release a series of LPDDR5 products, including 12 GB LPDDR5, a 12 GB LPDDR5 chip with POP packaging, and a 6 GB LPDDR5 chip with DSC packaging.

LPDDR5 represents the 5th generation of low-power DRAM. Compared to its predecessor, LPDDR4X, the new generation boasts a 50% increase in capacity and speed, with 12 GB capacity and a data transfer rate of 6400 Mbps, while reducing power consumption by 30%.

ChangXin Memory stated, “We plan to significantly enhance overall product performance, rapidly increasing our market share. Our LPDDR5 products have completed validation in models from major domestic phone manufacturers, including Xiaomi and TRANSSION HOLDINGS, and we are fully accelerating our marketing efforts.”

Previously, Samsung was the first in the industry to announce mass production of 12 GB LPDDR5 mobile DRAM in July 2019. Micron began supplying LPDDR5 DRAM chips with memory capacities of 6 GB, 8 GB, and 12 GB in February 2020. SK hynix announced the mass production of its 18 GB LPDDR5 mobile DRAM products in August 2021. This puts the technological gap between Samsung and ChangXin Memory at approximately four years.

However, in terms of mass production, ChangXin Memory still has a significant gap to close with competitors like Samsung. According to market research firm DRAMeXchange, cited by the Observer Network, the global DRAM market grew by 11.9% to US$10.675 billion (about 13.77 trillion won) in the second quarter of this year, with Samsung, SK hynix, and Micron occupying over 95% of the market.

Established in 2016, ChangXin Memory specializes in the design, research and development, production, and sales of DRAM. The company operates 12-inch wafer factories in Hefei and Beijing. In October last year, the United States included ChangXin Memory in its export control list.

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