To Open a New R&D Center This Month
Samsung Electronics is expected to release a 236-layer NAND flash product within this year. In addition, it is planning to open a new R&D center this month and the center will be in charge of developing more advanced NAND flash products.
Memory chip makers are competing to increase their layer counts. SK Hynix recently completed the development of a 238-layer product and Micron Technology announced that it developed the world’s first 232-layer NAND flash product.
Samsung Electronics’ share in the market is 35 percent, the highest in it. Samsung Electronics’ current layer count record is 176. The company is about to increase it by 60 with its production know-how and competitiveness in price and performance.
Kim Eun-jin
pr@businesskorea.co.kr