Ahead of TSMC and Intel
Samsung Electronics will start volume production of 3-nm semiconductors based on gate all-around (GAA) technology on June 30. The Korean semiconductor giant has laid the foundation to catch up with Taiwan TSMC, the global No. 1 foundry company.
Samsung Electronics will officially announce mass production of GAA-based 3-nm semiconductors on June 30. The GAA transistor structure is superior to the current FinFET structure, as it can decrease chip sizes and power consumption.
Samsung Electronics has started to use the new technology much earlier than TSMC and Intel, which are scheduled to start mass production of 3-nm chips in the second half of this year and the second half of next year, respectively.
Samsung's GAA technology drew attention when U.S. President Joe Biden autographed a prototype of a GAA-based chip during his visit to the company's Pyeongtaek Campus on May 20. Samsung Electronics vice chairman Lee Jae-yong introduced this product directly to President Yoon Suk-yeol and President Biden at the time.
Earlier this year, some industry watchers raised concerns that Samsung Electronics might delay mass production of 3-nm semiconductors due to a low yield problem. Yet, these concerns turned out to be groundless.