Friday, April 3, 2020
New Tech Brings Era of <1nm Semiconductors Closer
Angstrom Era Imminent
New Tech Brings Era of <1nm Semiconductors Closer
  • By Cho Jin-young
  • February 10, 2015, 07:45
Share articles

Single gold subnanowires were arranged in a specific order on a stepped silicon substrate. Then, noble metal atoms were attached to the gold nanowires without destroying them, making the basic structure necessary for semiconductors.
Single gold subnanowires were arranged in a specific order on a stepped silicon substrate. Then, noble metal atoms were attached to the gold nanowires without destroying them, making the basic structure necessary for semiconductors.

 

A Koran research team has successfully developed a technology to manufacture semiconductors smaller than 1 nm within a large area. 

A research team headed by Ahn Jong-ryeol and Dr. Song In-kyung, professors in the Department of Physics at Sungkyunkwan University, announced on Feb. 9 that they have succeeded in arranging metal wires smaller than 1 nm with different characteristics on a silicon substrate. 

As a result, it may be possible to make silicon semiconductors at not only the nanometer but also angstrom (one ten-billionth of one meter) level. In the past, it was unclear whether or not the phenomena possible at the nanometer size could also be feasible at an atomic size. 

The study is likely to lay the foundations for maintaining the technical superiority of the local semiconductor-based industry. Professor Ahn said, “I think that our study could manufacture silicon semiconductors in a large area at an atomic level.”

The research findings were first published online on Jan. 15 by Nano Letters, a monthly scientific journal published by the American Chemical Society.