Enhanced Server DRAM
Samsung Electronics announced that it has established a full line for the production of 20 nm DRAM to be used for PC and mobile servers by succeeding in mass production of 20 nm 8 Gb DDR4 on Oct. 21.
The mass production of the server DRAM started to meet the schedule for launch of CPUs specialized as DDR4 servers. Modules for DDR4 servers based on the new RAM perform at 2400 Mbps, 30 percent faster than existing DDR3, while consuming only 1.2 volts, lower than the 1.5 volts of DDR3.
The company came to be able to supply a maximum 128 GB modules by matching the 20 nm 8 Gb DRAM to the cutting-edge technology of Through Silicon Via (TSV).
Existing 4 Gb products go up to 64 Gb, but this new RAM has holes drilled into the top and bottom of the chips, making it possible to connect electrodes to another chip using through penetration electrode (TSV) technology. So the maximum size that modules can be is 128 GB.
An official at Samsung Electronics’ memory business unit said, “The company will increase the weight of 20 nm DRAM in production to supply the higher-performance, larger-capacity, lower-power products to meet the increasing demand by global customers.”