Bodes Well for GaN-related Ecosystems
The author is an analyst of NH Investment & Securities. He can be reached at hwdoh@nhqv.com. -- Ed.
Imec and Aixtron have succeeded in implementing technology for manufacturing GaN semiconductors for high voltage (1200V) applications previously only available on SiC. We expect positive impacts for related equipment companies.
Successful implementation of GaN technology for high voltage (1200V) applications
The semiconductor research institute Imec and equipment maker Aixtron have successfully manufactured a GaN buffer layer suitable for 1200V applications on 200mm wafers. Until now, high voltage (1200V) applications such as EVs have only been able to use SiC (silicon carbide) technology. Aixtron produces MOCVD equipment for the GaN semiconductor manufacturing process.
Compound semiconductors such as SiC and GaN have a band gap that is 3 times larger than conventional Si semiconductors, so they can withstand 10 times higher voltage in the same area. The use of compound semiconductor technology reduces the size of the power semiconductor and increases the current value it can handle. SiC and GaN semiconductors have begun to be used in on-board charging, EV inverters, and solar power inverters. SiC is more expensive than GaN and has the ability to withstand high voltages, so it is mainly used for high value-added applications such as EVs.
Bodes well for GaN-related ecosystems
In the past, it was difficult for GaN technology to achieve operating performance above 650V due to the high process challenges of growing a thick GaN buffer layer on a 200mm wafer. However, Imec and Aixtron have now developed GaN buffer layer epi-growth suitable for 1200V applications on Qromis QST substrates, which enable similar processing to the conventional CMOS. Moving ahead, GaN-based technology should be applied from 20V to 1200V.
Down the road, we believe that high-performance compound semiconductor manufacturing will become more active thanks to the application of GaN technology, which is cheaper than SiC. In GaN semiconductor manufacturing processes, MOCVD equipment for GaN layer deposition is important. MOCVD equipment is currently mainly manufactured by Veeco (US) and Aixtron (Germany). The development of such is to positively impact related industries.