3Bit V-NAND
Samsung Electronics unveiled a 32-layer 3 bit V-NAND, which is a NAND flash memory chip having a three-dimensional vertical structure with three-bit technology capable of boosting data storage efficiency.
Samsung Electronics made the product public at the Flash Memory Summit 2014 event, held on August 5 (local time) at the Santa Clara Convention Center located in San Jose. The product is characterized by its production efficiency twice as high as that of existing three-bit NAND flash memory with a planar structure.
The product is also called TLC, or triple level cell, and stores three bits of data in each cell. It therefore has storage efficiency twice and three times those of single-level or multi-level cell chips. Until recently, the three-bit technology has been applied only to planar NAND flash products.
In addition, the newly-developed three-bit V-NAND has 32 layers of laminated cells, and the degree of integration is at least 30 percent higher than the 24-layer V-NAND chips that are in wide use nowadays.