Forming Three-runner Race with Samsung and SK Hynix

Micron Technology of the United States plans to use extreme ultraviolet (EUV) lithography for production of DRAMs.

Micron Technology of the United States is speeding up the development of DRAMs using extreme ultraviolet (EUV) lithography. It is joining a race that was initiated by the world's first- and second-ranked DRAM manufacturers -- Samsung Electronics and SK Hynix.

Micron Technology is looking for engineers who will be in charge of developing EUV facilities through various recruitment sites. The engineers will be tasked with developing EUV scanner technology, managing new EUV equipment and communicating with ASML, the world’s only producer of EUV equipment.

Micron is ranked third in the global DRAM market after Samsung Electronics and SK Hynix. Its market share is around 20 percent.


Micron recently introduced a 176-layer product for the first time in the world in the NAND flash memory field. The company is producing 10-nm 3rd-generation (1z) products just like other top-ranking DRAM manufacturers. The chipmaker is expected to roll out 4th-generation (1a) DRAMs in first half of 2021.

However, a major difference between Micron and Samsung Electronics and SK Hynix is that Micron will not apply EUV technology to 1a DRAMs.

Micron suggested in a recent announcement that it may not apply EUV technology even to next-generation DRAM '1-beta' products in light of high costs and technical limitations.

Scott DerBauer, vice president of Micron, said that the company will introduce an EUV process to production of 1-delta products.

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