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Ultra-thin Semiconductor Material on the Horizon
Molybdenum Disulfide
Ultra-thin Semiconductor Material on the Horizon
  • By matthew
  • May 8, 2014, 10:02
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A 15mm euhedral, hexagonal molybdenite crystal on quartz, from Molly Hill mine, Quebec, Canada. Molybdenite is processed to make molybdenum disulfide (structure inset).
A 15mm euhedral, hexagonal molybdenite crystal on quartz, from Molly Hill mine, Quebec, Canada. Molybdenite is processed to make molybdenum disulfide (structure inset).

 

A local research team succeeded in developing an ultra-thin electronic element using molybdenum disulfide, expediting the development of next-generation ultra-thin semiconductor materials.

Seoul National University Physical Astronomy Professor Lee Tak-hee said on May 7 that he, together with Pohang Accelerator Research Institute PhD Baek Jae-yun and Pohang University of Science and Technology Professor Shin Hyun-joon, developed an extremely thin electronic element using semiconductor trait-bearing molybdenum disulfide.

Molybdenum disulfide (MoS2) is extremely thin and is also a semiconductor. The research was published in the international academic journal ACS Nano’s online version on April 14.

The electronic element that was developed this time can sustain its semiconductor traits and can be manufactured in a high density. Also its production can skip the post-processing step that shaves off materials that grow broadly on the surface.

The core achievement is that MoS2 can be distributed in any place and with any shape, making it possible to mass-produce all of the electronic elements at once.