World’s First 1TB eUFS

Samsung Electronics’ 1TB eUFS.
Samsung Electronics’ 1TB eUFS.

A smartphone that has memory capacity equivalent to laptop memory in units of terabytes (TB) has been developed.

Samsung Electronics announced on January 30 that it will start mass producing the world's first 1TB mobile memory (embedded universal flash storage (eUFS)) this month.

The Korean tech giant began mass production of 128GB eUFS 2.0 for mobile devices in January 2015, which was followed by a launch of 256GB eUFS 2.0 and 512GB eUFS 2.1 in February 2016 and November 2017, respectively. About a year later, it has announced the launch of a new device with doubled memory storage.

The newly developed 1TB eUFS 2.1 combines 16 stacked layers of the industry's most advanced 512Gb V NAND and a high-performance controller to double the memory capacity within the same package size as the previous model. With the 1TB memory capacity, a user can store 260 10-minute-long videos that have been in an ultra-high definition (UHD) mode using a smartphone.

In addition, the data storage and retrieval speed have become faster compared to the previous version of the product. Sequential read speed indicates the data storage speed for photos and videos, and at up to 1,000 MB per second, the 1TB eUFS 2.1 features twice the sequential read speed of a typical SATA solid state drive (SSD).

Samsung explained that the new eUFS takes about 5 seconds to transfer a 5GB FHD video from a smartphone to a computer. Random read and write speed, which indicates the typical mobile phone operation speed, is up to 38% faster than the previous 512GB version.

"1TB eUFS is an unprecedent memory solution that enables users to experience the convenience of premium laptops in next generation mobile devices," said Choi Cheol, vice president of strategic marketing at Samsung Electronics Memory Division. "By establishing a stable supply system, Samsung will support the timely launches of upcoming smartphone models by global companies,” he added.

Samsung plans to expand the production of the new 512Gb V NAND at its Pyeongtaek plant throughout the first half of this year to fully meet the demand for the 1TB memory.

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