Speed and Productivity Doubled
Samsung Electronics began to mass-produce 16Gb low-power DDR4X (LPDDR4X) mobile DRAMs based on a second-generation 10-nanometer (1y) process for the first time in the world.
According to the semiconductor industry on July 26, Samsung Electronics began to roll out 16Gb LPDDR4X mobile DRAMs on its Pyeongtaek Campus in Korea in July in eight months since mass production of second-generation 10G (1y) 8Gb DDR4 DRAMs for servers in November of last year.
Samsung Electronics plans to ramp up the proportion of DRAM products adopting the second-generation 10nm (1y) process to more than 70%.
The new product doubled speed and productivity compared to 20-nanometer (2y) 4Gb LPDDR3 mobile DRAMs. The product has the same operating speed (4266Mb/s) as first-generation 10-nanometer (1x) 16Gb LPDDR4X DRAMs loaded into the latest flagship smartphones but consumes 10% less power.
An 8GB DRAM package with four 16Gb chips can transfer 34.1GB of data per second. The package is more than 20% slimmer compared to first-generation ones, enabling customers to design slimmer mobile devices.