SK Hynix announced on October 30 that it has developed the world’s first 6 gigabit (Gb) LPDDR3 memory chip for next-generation premium smartphones using its 20nm class process technology. The chip is a high-density mobile memory solution with low power consumption requirements.
3 gigabytes (GB) of RAM fits on a single chip by stacking 6Gb memory modules in four layers. In density, 6Gb chips in a four-layer stack are the same as 4Gb modules that are piled six layers high. However, the 6Gb-based 3GB solution can reduce electricity usage by 30% in both normal and standby modes, and is slimmer compared with 4Gb-based units. On top of that, the four-layer 6Gb modules operate at 1.2V, consuming less power as a result.
With a server data transfer speed of 1,866 Mbps, SK Hynix’s latest mobile DRAM module can feed 7.4 GB of data to the processor via a single funnel, or 14.8 GB of data using two funnels, through a 32-bit Information Outlet (I/O). Designed specifically for use in mobile devices, the DRAM memory is packaged using Package on Package (PoP) technology, allowing board space to be used more efficiently.
The world’s second-largest memory chip manufacturer has already started to provide free product samples to customers, with a plan to begin mass production early next year.
Currently, 2GB low-power DDR3 RAM is mostly used for smartphones. The Samsung Galaxy Note 3 is the first device with 3GB of RAM, which is expected to be widely used for high-performance smartphone devices from the first half of next year.
Jin Jeong-hun, Senior Managing Director of SK Hynix, said, “Following our successful development of the industry’s first 8Gb LPDDR3 memory chip in June, our company again developed the world’s first 20-nano class mobile DRAM memory module. So, I think that our competitiveness for high-density mobile DRAM chips became stronger.”