Flash Storage with Doubled Capacity

Samsung Electronics started the mass production of 512-gigabyte embedded universal flash storage (eUFS) chips for use in mobile devices for the first time worldwide. (photo courtesy: Samsung Electronics)
Samsung Electronics started the mass production of 512-gigabyte embedded universal flash storage (eUFS) chips for use in mobile devices for the first time worldwide. (photo courtesy: Samsung Electronics)

 

Samsung Electronics announced on December 5 that it started the mass production of 512-gigabyte embedded universal flash storage (eUFS) chips for use in mobile devices for the first time worldwide. 

An eUFS chip is a package in which a dedicated controller is provided with a NAND flash memory. Samsung Electronics created the market in 2015 by producing 128-gigabyte eUFS chips and boosted the capacity to 256 GB last year.

Samsung Electronics’ 512-gigabyte eUFS chip has eight 64-layer 512-gigabit V-NAND chips vertically stacked with a dedicated controller developed by Samsung Electronics. Its capacity is twice that of a 256-gigabyte product based on 48-layer, but the two types have the same size, 11.5 mm in length and width and up to 1 mm in thickness.

These days, 64-gigabyte products are in wide use as an eUFS chip for use in smartphones. Each of these products is capable of recording 13 10-minute UHD videos. Meanwhile, no less than 130 videos can be recorded with the 512-gigabyte product developed by Samsung Electronics. In addition, it is capable of sending five-gigabyte full-HD footage from a smartphone to a solid state drive in just six seconds.

“The capacity has been doubled without any significant increase in power consumption,” Samsung Electronics explained, adding, “We are going to supply 512-gigabyte eUFS chips in a stable and timely manner so that next-generation mobile devices can be released in time.”

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