Shift to V-NAND

Samsung Electronics is planning to raise the ratio of its fourth-generation V-NAND flash production to 50% within this year.
Samsung Electronics is planning to raise the ratio of its fourth-generation V-NAND flash production to 50% within this year.

 

Samsung Electronics is planning to raise the ratio of its fourth-generation V-NAND flash production to 50% within this year as the operation of its semiconductor manufacturing facilities located in Pyeongtaek, South Korea begins in earnest.

The company announced on June 15 that it expands its product portfolio to cover NAND flash products for servers, PCs and mobile devices by beginning the mass production of fourth-generation (64-layer) 3-bit 256Gb V-NAND. “We have improved the speed, productivity and power efficiency of the 64-layer products by at least 30% in comparison to those of third-generation, 48-layer, products by means of a super high density cell structure, super high speed operation circuit design, and super high reliability CTF thin film formation,” the company explained.

Samsung Electronics has supplied solid state drives adopting the fourth-generation V-NAND technology to major PC manufacturers since January this year. It is planning to apply its fourth-generation V-NAND products to embedded universal flash storage (eUFS) products for mobile use, memory cards, etc.

V-NAND flash memories are characterized by dozens of layers being stacked in it for cells to be vertically stacked in a three-dimensional manner. These memories have their own physical limitations as their structures are increasingly twisted in proportion to the number of the layers. Samsung Electronics, however, overcome the limitations by means of its super high density cell structure dubbed 9-hole, which it claims is an original technique for 1 Tb V-NAND that has at least one trillion pieces of information within a single chip.

“The super high speed operation circuit design allows 1 Gb of data to be transmitted per second, which results in 150% of the data recording rate of third-generation products,” Samsung remarked, adding, “At the same time, the power consumption efficiency has been boosted by more than 30% by the operating voltage being lowered from 3.3 V to 2.5 V.” It went on to say, “The super high reliability CTF thin film formation has extended the lifespan of cells and reduced their size while the reliability has been improved by 20% based on less data interference between the cells.”

 

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