10nm FenFET Processor
Samsung Electronics announced on February 23 that it began the mass production of Exynos 9 (8895) last month. It is a mobile application processor integrated with a high-performance LTE modem by the use of a 10 nm FinFET process.
FinFET can be defined as a technique for the production of a semiconductor device that has a three-dimensional structure instead of a planar one. This technique is advantageous in terms of performance and power consumption reduction alike. To be specific, its performance and power consumption are 127% and 60% of those of a 14 nm process, respectively.
The Galaxy S8, Samsung Electronics’ new smartphone scheduled to be unveiled next month, is expected to come with the Exynos 9 processor. The phone has a modem supporting Gbps communications and up to 1 Gbps and 150 Mbps are available during downloading and uploading, respectively. In addition, it is likely to be equipped with a second-generation 64-bit CPU developed by Samsung Electronics itself along with the ARM Mali-G71 GPU. The eight core processors in the mobile application processor interwork based on Samsung’s own technology.
Moreover, it is likely to be capable of capturing 120 UHD images per second with its high-performance video multi format codec, performing video processing so that the videos it plays back can have a high quality and supporting UHD resolution in VR devices as well.