Next-Gen Memory

SK Hynix’s DDR4 SDRAM Unveiled at IDF 2013.SK Hynix has supplied its 32GB DDR4 SDRAM customer samples to Intel, implying that the commercial utilization of the next-generation memory chip is just around the corner. The former announced the news on September 10 (local time) at the Intel Developer Forum (IDF) 2013 held at the Moscone West Convention Center in San Francisco, California. 

A customer sample is a sort of prototype a semiconductor chip developer provides for its clients. It is closer to commercial-scale manufacturing than an engineer sample for in-house purposes. 

“The Joint Electron Device Engineering Council has yet to determine the standard dimensions of DDR4 memory chips, but the key parts are likely to follow the current discussions,” said the company, adding, “Once the JEDEC finalizes the process, we can manufacture the chips so that Intel and other companies can perform compatibility tests.”

SK Hynix unveiled five types of DDR4 SDRAM at the IDF 2013, all of them having been manufactured through its 20-nm fabrication process. Specifically, they are of 4GB, 8GB, 16GB, and 32GB in capacity with no error correcting code (ECC); and of 8GB with ECC. Their input and output speed is 2,133Mb per second, which is at least 60% faster than that of existing DDR3 SDRAM chips. Meanwhile, their power consumption has been reduced by 0.3 volts to 1.2 volts. 

Copyright © BusinessKorea. Prohibited from unauthorized reproduction and redistribution