Samsung Electronics announced on March 5 it had started the mass-production of the world's first 10-nanometer level dynamic random access memory (DRAM) chips from the February this year.
The Korean IT giant said it is now producing 8-gigabit DDR4 chips through 10-nanometer-level technology, which came in around two years after the company made 4-gigabit DDR3 DRAMs with 20-nanometer.
The company said the technology can enhance the processing speed by 30 percent to 3,200 Mbps from the previous 20-nanometer technology and reduce electricity consumption by 10 up to 20 percent.
"In the near future, we will also launch 10nm-class mobile DRAM products with high density to help mobile manufacturers develop more innovative products to raise conveniences of mobile device users," the company said.
Samsung Electronics added it is planning to begin the mass-production of 10-nano-level mobile DRAMs this year to enhance its competitiveness in the super-resolution smartphone market, following the PC and server markets.