On August 16, Samsung Electronics revealed a new type of solid state drive (SSD) based on its 3D Vertical NAND (V-NAND) technology. This technology is the process of vertically stacking memory cells in order to pack more storage into less space. This is an application to the SSD market of a technology already created by Samsung in the area of 3D V-NAND flash memory.
The company showcased two models of SSD, a 960GB model and a 380GB model. They are both designed to be used in enterprise servers and data clusters.
Previously there was a theory that memory and SSDs could not move beyond the density of a separation of individual components of 10-20 nm. This 3D stacking sidesteps the 10-20nm limit on chip design by expanding into the third dimension.
The technology makes SSDs that are smaller, faster, and more reliable. The new 3D V-NAND SSD is approximately 20% faster than Samsung’s SSDs using 2d V-NAND. Also, power consumption is reduced to 40% of previous demands. The new manufacturing process is also rumored to be twice as fast as previous processes.